Journal
Scientific and technical journal «Priborostroenie»
UDK621.373.535
Issue:8 (58)
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THERMALISATION OF ELECTRON GAS AND THE ROLE OF SATURATION OF INTERBAND ABSORPTION UNDER THE ACTION OF FEMTOSECOND LASER PULSE IN SEMICONDUCTORS AND DIELECTRICS
Annotation
Evolution of energy distribution function for photo-excited charge carriers In a semiconductor and dielectric under the action of femtosecond laser pulse is analyzed. The consideration is based on Boltzmann kinetic equation for the carriers with due regard for the effects of interzone absorption as well as intra-zone absorption and collision relaxation. Thermalisation time for photo-excited electrons is estimated. The influence of saturation of interband absorption on concentration of free electrons is studied. Dependence of concentration of photo-excited electrons on energy density in incident femtosecond laser radiation.
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