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MODELING THE TEMPERATURE FIELD ANISOTROPY OF VOLUMETRIC INTEGRATED CIRCUITS

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A statistical method for analyzing the temperature stability of electronic devices is considered. It is shown that, on the basis of a factorial experiment, it is possible to obtain an equation of temperature er-ror, in which a functional relationship is established between factors (temperature of electrical radio products) and the output parameter of an electronic device. Since under the conditions of the spatial structure of volumetric integrated circuits, the unification of electrical and radio products is possible not only in a plane, but also at multiple levels, the concept of “volumetric local group” is introduced. Design of such a group is demonstrated to necessitate a preliminary determination of temperature distribution for the volumetric integrated circuit spatial structure. Simulation of temperature field distribution is carried out using the finite element method currently recognized as the most effective numerical method for solving the differential equation of thermal conductivity. Results of temperature stability modeling for a pulsed power amplifier designed as a three-layer structure of a volumetric integral circuit are presented.

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