Journal
Scientific and technical journal «Priborostroenie»
UDK621.317.7.027.3; 621.319.027.3
Issue:4 (53)
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Regime of ultraspeed switchdown of high-voltage MOP-transistor with a switching time no greater than several nanoseconds is studied theoretically. A mathematical model and explanation of the ultraspeed process is proposed. The theoretical conclusions are confirmed by results of direct experiments.