Journal
Scientific and technical journal «Priborostroenie»
UDK539.1.043 3
Issue:2 (54)
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Creation of laser-induced morphology features of the c-Si and mc-Si with the use of 532 nm Nd: YAG laser nanosecond pulses in vacuum and СО2 atmosphere is investigated. Specimens of 20×20 mm laser-textured mc-Si wafers with typical pillar array structures of aspect ratio (depth to width) greater than or equal to 3 and weighted effective reflectance below 3 % are obtained.