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Investigation of structure and transport properties of graphene grown by low-pressure no flow CVD on polycrystalline Ni films

Аннотация:

Graphene films were synthesized by the low-pressure no flow CVD on polycrystalline nickel catalyst films grown by the self-ion assisted deposition technique at different biases. Graphene films were transferred to a SiO2/Si substrate using PMMA. The graphene grown on Ni films with bimodal grain size distribution and weaker (111) texture had higher thickness uniformity and a lower number of graphene layers. The graphene grown on Ni films with a monomodal grain size distribution and stronger (111) texture had lower thickness uniformity and a higher number of graphene layers. The transport properties of the graphene films were investigated with the aid of Hall measurements.

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