Studying temperature properties of an electrical switch based on vanatium dioxide
Annotation
The research investigates the temperature dependence of electrical switching threshold for a thin-film vanadium dioxide sandwich structure in a wide temperature range from 15 K to 340 K. The experimental data are analyzed by means of numerical simulation of the switching process. High-field effects are found to significantly influence the development of switching in vanadium dioxide in the low-temperature region.
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