STATIONARY GAIN MODES OF BIPOLAR TRANSISTORS
Annotation
The boundary value problem describing adequately the stationary gain modes of р—n—р- and n—р—n-bipolar transistors in a wide range of the collector current density is formulated and solved. Expressions for current gain, as well as for injection efficiency, minority carriers transfer coefficient at high injection levels in the basic areas of bipolar transistor are derived and analyzed. The basic physical mechanisms responsible for increase as well as for decrease in gain with increased collector current from the lowest possible up to the maximal allowable values are considered. Comparative analysis of the obtained theoretical results with experiments data is presented.
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