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RESEARCH OF SILICON SURFACE ETCHED IN POTASSIUM HYDROXIDE SOLUTION

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The influence of the depth of anisotropic etching of silicon in KOH solution on the surface roughness is studied experimentally. Wire etching of silicon wafers at various depths was followed by measurement of roughness parameters with the PF-60 optical profilograph. It is shown that such parameters of surface roughness as Ra, Rz, Rmax vary with the depth. To improve the surface quality and reduce the above parameters, chemical polishing in an isotropic etchant was used. It is argued that the studies carried out have practical significance for the manufacture of silicon structures of micromechanical systems. 

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