MODELING OF RESONANT-TUNNELING DIODES I-V CHARACTERISTICS KINETICS UNDER DESTABILIZING FACTORS INFLUENCE
Annotation
Resonant tunnel diodes (RTD) are promising elements for use in microwave and HF transceivers, in particular, in nonlinear frequency converters of radio signals. The use of RTD as nonlinear elements allows to improve the performance of the converters, as well as to expand the operating frequency range up to terahertz. The kinetics of RTD volt-ampere characteristic at specified operating conditions under the influence of high temperature and ionizing radiation is studied. Mathematical models describing degra-dation of the RTD volt-ampere characteristic under the effects are developed. The obtained models are used as a basis of a software package that allows to simulate the kinetics of RTD volt-ampere character-istic caused by the action of above factors. The simulation results are compared with experimental data.
Keywords
Постоянный URL
Articles in current issue
- TERNARY QUESTIONNAIRES WITH ERRORS AND UNCERTAINTIES IN THE ANSWERS
- ANALYSIS OF DYNAMIC SYSTEM PROPERTIES
- FUNCTIONAL-STRUCTURAL SYNTHESIS OF A SYSTEM FOR COLLECTION AND PROCESSING OF INFORMATION ON SPACE VEHICLES TECHNICAL CONDITION
- METHOD OF INDIRECT MEASUREMENT OF AIRCRAFT AERODYNAMIC ANGLES USING ACCELEROMETERS AND PRESSURE SENSORS
- PROTOTYPING DIGITAL SYSTEMS OF CONTROL OVER PACKET PIEZOAKTUATORS
- SOFTWARE ASSESSMENT BY A SET OF INDICATORS
- DYNAMIC INTERPRETATION OF FORMAL DESCRIPTION AND SOLUTION OF THE PROBLEM OF COMPLEX OBJECT MODERNIZATION
- METHODOLOGY FOR CONSIDERATION OF TECHNOLOGICAL AND OPERATIONAL FACTORS IN DESIGN OF MICRO- AND NANODEVICES
- MODELING OF RESONANT-TUNNELING DIODES I-V CHARACTERISTICS KINETICS UNDER DESTABILIZING FACTORS INFLUENCE
- METHOD OF IMPROVING THE ACCURACY IN THE ASSEMBLY OF SMALL-MODULE GEARS