ELECTRICAL PROPERTIES OF HOT WALL DEPOSITED PbTe–SnTe THIN FILMS
Аннотация:
Polycrystalline Pb1−xSnxTe (0.0 ≤ x ≤ 1.0) telluride alloys were synthesized by the direct fusion technique. Thin films of these materials were prepared by a hot wall deposition method on glass substrates at Tsub =230–330 ◦C and in a vacuum of about 10−5 Torr. The microstructure of the films was characterized by XRD, SEM, EDX and AES. The films showed a natural cubic structure. The thin films’ microstructure consisted of densely packed grains with dimensions of 50–300 nm and crystallite growth direction is perpendicular to substrate plane. The as-grown Pb1−xSnxTe films showed p-type conductivity. Thermoelectric measurements of the films showed high values for the room-temperature Seebeck coefficient ranging, from 20 to 400 µV·K−1, for SnTe to PbTe thin films, respectively. The conductivity of the films was in the range of 3·101–1·104 Ω−1·cm−1.
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