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STUDY OF CHARACTERISTICS OF MATRIX CdHgTe-PHOTODETECTOR FOR MEDIUM IR-RANGE WITH OPERATING TEMPERATURE OF 160—170 K

Annotation

A method is proposed for measuring megapixel MWIR photodetector. Results of bench testing of prototype photodetector are presented. The possibility of application of the results to development of optoelectronic devices for on-board detection complex is discussed. The results of measurements of basic parameters of the photodetector (dynamic range and sensitivity threshold) indicate technical possibility to obtain extremely high sensitivity with cooling the photosensitive layer down to the temperature not lower than 160—170 K and at high frame rate.

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