Journal
Scientific and technical journal «Priborostroenie»
UDK621.38
Issue:4 (59)
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CURRENT GAIN FOR A COMPOSITE BIPOLAR TRANSISTOR WITH ADDITIONAL SYMMETRY
Annotation
Using transistor modules from devices with different types of conductivity (composite-based transistors with additional symmetry) as the examples, general applicability of the existing model for calculation of the ratio of the current gain to collector current is confirmed.
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Articles in current issue
- COMPARATIVE ANALYSIS OF CHARACTERISTICS OF COMPLEX AND ANALYTICAL SIGNALS
- SIGNAL PROCESSING OF SATELLITE NAVIGATION SYSTEMS WITH QUADRATURE MULTIPLEXING AND FREQUENCY DIVISION
- METHOD OF ATMOSPHERIC MODEL REFINEMENT FOR BALLISTIC SUPPORT OF ROCKET-CARRIER LAUNCHES
- STOCHASTIC FILTERING FOR INTER-SATELLITE MEASUREMENTS IN GREAT-CIRCLE TRAJECTORIES
- CONTROL OVER GAS-LIFT OIL WELLS OPERATION UNDER PARAMETRIC UNCERTAINTY CONDITION
- DATA TRANSLATION BETWEEN EDA AND MCAD SYSTEMS
- STATIONARY AMPLIFICATION REGIME OF POWER BIPOLAR TRANSISTOR MODULES
- IMPACT OF ATMOSPHERIC TURBULENCE ON POTENTIAL ACCURACY OF PULSED LASER RANGEFINDER
- PREVENTION OF IMAGE TILT IN PLANE MIRROR OPTICAL SYSTEMS
- MEASURING DEGREE OF BLACKNESS OF SAMPLE SURFACE BY THE MONOTONIC HEATING METHOD
- DEPENDENCE OF THERMAL CONDUCTIVITY OF SILICONE-BASED COMPOSITE ON VOLUME CONCENTRATION OF BORON NITRIDE
- AUTOMATION OF THE ITSM-1 INSTRUMENT FOR MEASURING THERMAL CONDUCTIVITY OF CONSTRUCTION MATERIALS