FORMATION OF ANTIREFLECTION MICRORELIEF ON SILICON SURFACE IRRADIATED WITH NANOSECOND ITTERBIUM LASER
Annotation
Specifics of morphology of microrelief formed on monocrystalline silicon surface under the action of series of nanosecond laser pulses of ytterbium fiber laser with intensities close to melting threshold are studied. It is shown that at multi-pulse irradiation the relief consist of micro cones with surface concentration depending on laser power density. The obtained microrelief has antireflective properties and its formation leads to decreasing of full reflection coefficient for 3—4 times in comparison with initial value.
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