Journal
Scientific and technical journal «Priborostroenie»
UDK621.315.592: 536.717: 537.33
Issue:6 (52)
IN SITU ELLIPSOMETRY OF GROWING MCT-BASED NANOSCALE HETEROSTRUCTURES
Annotation
Development of ellipsometric instrumentation is reviewed, and analysis of data of in situ ellipsometry of CdxHg1-xTe structures during molecular beam epitaxy is presented. An automatic ellipsometer adapted for the measurements is developed on the base of static optical scheme. A high operation speed allows application of the ellipsometer to technological control during structure growth. Experimental results and numerical calculations are presented demonstrate applicability to growth of layered nanostructures of homogeneous layers as well as of layers with assigned distribution of composition across the layer thickness.
Keywords
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Articles in current issue
- CORRECTION OF INFRARED IMAGES ON THE BASE OF REAL-TIME STATISTICAL DATA PROCESSING
- A GAIN IN EFFICIENCY OF LASER LOCATOR OF OPTICAL SYSTEMS
- CALIBRATION OF TELEVISION MEASURING DEVICES AT INACCESSIBLE OBJECTS
- TWO-CHANNEL PSEUDOBINOCULAR OPTOELECTRONIC DEVICE FOR POTENTIAL HAZARD DETECTION
- CONCEPTUAL DESIGN OF UNIVERSAL OPTICAL-ELECTRONIC OBSERVATION DEVICES
- PSEUDO-COLOR EYEPIECE FOR NIGHT VISION DEVICES
- OFF-AXIS VOLUME HOLOGRAPHIC OPTICAL ELEMENTS FOR INFRARED
- STUDY OF BASIC TWO-LENS COMPONENTS OF HIGH-APPERTURE OBJECTIVES FOR MODERN IMAGE INTENSIFIERS
- CHROMATIC PROPERTIES OF MANGIN MIRROR OBJECTIVE IN SEVERAL RANGES OF A SPECTRUM
- DEVELOPMENT OF AN OPTICAL SYSTEM WITH DISCRET CHANGE OF FOCAL LENGTH
- TUNABLE MULTIPLEX OPTICAL FILTERS
- LASER APPLICATION FOR NANOSTRUCTURE FORMATION
- HIGH-POWER CW SOURCE OF EXTREME VUV RADIATION FOR PROCESSING OF SEMICONDUCTOR MATERI
- IN SITU ELLIPSOMETRY OF GROWING MCT-BASED NANOSCALE HETEROSTRUCTURES