Journal
Scientific and technical journal of information technologies, mechanics and optics
UDK681.382.2
Issue:5 (69)
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GaAs P-I-N STRUCTURES FOR X-RAY DETECTORS
Annotation
The characteristics of GaAs p-i-n structures, made by vapor phase epitaxy, were researched. New conditions of epitaxial growth, allowing the production of thick ultra-pure GaAs layers by single process are worked out.
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